Molecular beam epitaxy 1994. IIHIYAMIZU, S; SHIRAKI, Y; GONDA, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, issn 0022-0248, 722 p., 2Conference Proceedings

Prospects of SiGe heterodevicesKASPER, E.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 921-925, issn 0022-0248, 2Conference Paper

Heteroepitaxy and characterization of CuInSe₂ on GaAs(001)NIKI, S; MAKITA, Y; CHICHIBU, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1201-1205, issn 0022-0248, 2Conference Paper

Ferroelectric phase transition in BaTiO₃ filmsYONEDA, Y; KASATANI, H; TERAUCHI, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1090-1093, issn 0022-0248, 2Conference Paper

ZnMgSSe based laser diodesITOH, S; ISHIBASHI, A.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 701-706, issn 0022-0248, 2Conference Paper

The growth and properties of group III nitridesFOXON, C. T; CHENG, T. S; TRET'YAKOV, V. V et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 892-896, issn 0022-0248, 2Conference Paper

Cathodoluminescence investigation of SiGe quantum wires fabricated on V-groove patterned Si substratesHIGGS, V; LIGHTOWLERS, E. C; USAMI, N et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1070-1073, issn 0022-0248, 2Conference Paper

Elastic anomalies in single crystal copper/nickel superlattices grown by molecular beam epitaxySAKAUE, K; SANO, N; TERAUCHI, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1154-1158, issn 0022-0248, 2Conference Paper

Formation of InSb nanocrystals on Se-terminated GaAs(001)WATANABE, Y; MAEDA, F; OSHIMA, M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 863-867, issn 0022-0248, 2Conference Paper

Resonant-tunneling triangular-barrier optoelectronic switch by gas source molecular beam epitaxySAKATA, H; UTAKA, K; MATSUSHIMA, Y et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1389-1394, issn 0022-0248, 2Conference Paper

A scanning tunneling microscopy study of epitaxial Ge growthTSUI, F; BARLETT, D; WELLMAN, J et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 960-963, issn 0022-0248, 2Conference Paper

Analysis and optimization of the electron cyclotron resonance plasma for nitride epitaxyOHTANI, A; STEVENS, K. S; KINNIBURGH, M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 902-907, issn 0022-0248, 2Conference Paper

Growth and characterization of wide bandgap Zn_1-xHg_xSeHARA, K; MACHIMURA, H; USUI, M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 725-728, issn 0022-0248, 2Conference Paper

InAs deep quantum well structures and their application to Hall elementsKUZE, N; NAGASE, K; MURAMATSU, S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1307-1312, issn 0022-0248, 2Conference Paper

Initial stages of Ag growth on Sb-terminated GaAs(001)MAEDA, F; WATANABE, Y; OSHIMA, M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1164-1168, issn 0022-0248, 2Conference Paper

Molecular beam epitaxial growth and characterization of epitaxial GaSe films on (001)GaAsKOJIMA, N; SATO, K; BUDIMAN, M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1175-1179, issn 0022-0248, 2Conference Paper

Recombination mechanisms in photopumped Zn_1-xCd_xSe/ZnSe multiple quantum well lasersCALCAGNILE, L; DI DIO, M; FRANCIOSI, A et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 712-717, issn 0022-0248, 2Conference Paper

Al growth on Si(001) observed by scanning tunneling microscopySHIMIZU, N; KITADA, H; UEDA, O et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1159-1163, issn 0022-0248, 2Conference Paper

Bi₂Sr₂Ca_n-1Cu_nO_y thin films by growth interruption techniqueISHIBASHI, T; SOUTOME, H; OKADA, Y et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1094-1097, issn 0022-0248, 2Conference Paper

Characterization of molecular beam epitaxy grown CuInSe₂ on GaAs(001)SHIODA, R; OKADA, Y; OYANAGI, H et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1196-1200, issn 0022-0248, 2Conference Paper

Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substratesHARMAND, J. C; PRASEUTH, J. P; IDIART-ALHOR, E et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1292-1296, issn 0022-0248, 2Conference Paper

GaN based III-V nitrides by molecular beam epitaxyMORKOC, H; BOTCHKAREV, A; SALVADOR, A et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 887-891, issn 0022-0248, 2Conference Paper

Heteroepitaxy of ferromagnetic MnAs thin films on (001) GaAs : template effects and epitaxial orientationsTANAKA, M; HARBISON, J. P; ROTHBERG, G. M et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1132-1138, issn 0022-0248, 2Conference Paper

High-quality CdF₂ layer growth on CaF₂/Si(111)IZUMI, A; TSUTSUI, K; SOKOLOV, N. S et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1115-1118, issn 0022-0248, 2Conference Paper

Influence of growth parameters on the properties of ZnSe-GaAs(001) heterostructuresVANZETTI, L; BONANNI, A; BRATINA, G et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 765-769, issn 0022-0248, 2Conference Paper